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Bipolar transistors, MOSFETs, IGBTs...
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Power transistor / MOSFET - 42 - 70 V | VND series
ST offers a wide range of automotive-grade smart 3 and 5-pin low-side switches (OMNIFET) based on VIPower (vertical intelligent power) technology. This proprietary technology allows integration of complete digital and analog control and protection circuits driving a vertical power MOSFET, all...
Power transistor / MOSFET - 42 - 70 V | VND series
ST offers a wide range of automotive-grade smart 3 and 5-pin low-side switches (OMNIFET) based on VIPower (vertical intelligent power) technology. This proprietary technology allows integration of complete digital and analog control and protection circuits driving a vertical power MOSFET, all...
Power IGBT - 350 - 1300 V
Because of its very well known propriety technology, delivering all around energy efficient system designs and its reliability, ST's IGBT is leading the industry. Its...
Power IGBT - 350 - 1300 V
Because of its very well known propriety technology, delivering all around energy efficient system designs and its reliability, ST's IGBT is leading the industry. Its voltages ranging from 350 V to 1300 V and Low VCE(SAT) for reduced conduction losses made ST's IGBT the top of the line. This highly unique and remarkable equipment also has an improved switch off energy spread versus increasing temperature resulting in reduced switching losses. What also made this voltage special, convenient and flexible is its tight parameter distribution for design simplification and easy paralleling. This extremely innovative technology is ideally used for white goods.
Power transistor / bipolar / Darlington - 15 - 1700 V
These groundbreaking bipolar transistors are specially manufactured by ST and this highly specialized tool incorporates a broad range of power. It is specifically created to produce...
Power transistor / bipolar / Darlington - 15 - 1700 V
These groundbreaking bipolar transistors are specially manufactured by ST and this highly specialized tool incorporates a broad range of power. It is specifically created to produce energy-efficient designs. This magnificent piece of equipment has a range that includes Darlington transistors in addition to BJTs with a VCES from 15 up to 1700 V. It has several distinct characteristics that encompass highly efficient switching times and significantly decreased saturation voltage that ensures reduced switching and conduction losses, integrated diode versions to guarantee diminished component count, a well-controlled hFE parameter that assured optimal reliability as well as excellent cost to performance ratio.
Power transistor / MOSFET - -500 V ... +1500 V
STs MOSFET portfolio works with many voltages that go from -500 to 1500 V and work with low on-resistance ratings with a good package to boot. This is all designed with high and...
Power transistor / MOSFET - -500 V ... +1500 V
STs MOSFET portfolio works with many voltages that go from -500 to 1500 V and work with low on-resistance ratings with a good package to boot. This is all designed with high and low-voltage support and is more efficient than most other models. This can be found in one of thirty different packages with a dedicated control pin being available for some. This is made with an efficient body while the 1mm high unit can work with 650 volts of power at a time to manage a better gate charge without using more power than needed, thus making it easier to manage diodes in today's products without risking any items as they work. You can choose one of many different kinds of designs for the functions you require.
RF transistor / power - 1200 V | SCTx0N120 series
In ST's quest for expansion of wide bandgap transistors with silicon carbide comes the SiC MOSFETs that is considered to be the first among a variety of high-competent products....
RF transistor / power - 1200 V | SCTx0N120 series
In ST's quest for expansion of wide bandgap transistors with silicon carbide comes the SiC MOSFETs that is considered to be the first among a variety of high-competent products....
Power transistor / MOSFET - 12 - 100 V | CSD series
The N-Channel MOSFET Transistor technology is remarkably designed to provide half...
Power transistor / MOSFET - 12 - 100 V | CSD series
The N-Channel MOSFET Transistor technology is remarkably designed to provide half the gate charge for the same resistance. It also helps for designers to achieve 90% power-supply efficiencies with double the frequency. It also improves energy efficiency in high-power computing, networking, server systems and power supplies.
Field-effect transistor / FET / GaAs / microwave
The C-Band Power GaAs IMFETs are part of the UL family under the GaAs FETs product family particularly designed by Toshiba which is created for the C-Band frequency bandwidth with superior gain, lesser inter-modulation...
Field-effect transistor / FET / GaAs / microwave
The C-Band Power GaAs IMFETs are part of the UL family under the GaAs FETs product family particularly designed by Toshiba which is created for the C-Band frequency bandwidth with superior gain, lesser inter-modulation distortion and advanced efficiency. The UL product family is composed of a variety of products from a range of 4 watts (W) up to 25W enriched with different functions like point-to-point microwave digital radio for terrestrial connections and block up mixer or VSAT workstation for satellite connections.
The Toshiba America Electronic Components, Inc. (TAEC) is part of the North America Group and provides production, marketing and sales function for the Toshiba Microwave Semiconductors plus additional customer relations support in the said region for superior customer service.
The Toshiba America Electronic Components, Inc. (TAEC) is part of the North America Group and provides production, marketing and sales function for the Toshiba Microwave Semiconductors plus additional customer relations support in the said region for superior customer service.
HEMT transistor - TGI series
The Microwave Power GaN Hemt TGI1314-50L possess high power properties with pout of 47.0dBm...
HEMT transistor - TGI series
The Microwave Power GaN Hemt TGI1314-50L possess high power properties with pout of 47.0dBm at and Pin of 42.0dBm. The device contains high gain properties of GL with 8.0dB at 13.75GHz to 14.5GHz. It also has high compatibility with broad band internal matched HEMT. The package is made out of hermetically packed and sealed process.